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IRF2807ZSTRL

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IRF2807ZSTRL

MOSFET N-CH 75V 75A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF2807ZSTRL is an N-Channel MOSFET designed for high-power switching applications. This component features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 170W (Tc). The low on-resistance is specified at 9.4mOhm maximum at 53A and 10V gate drive voltage. Its high gate charge of 110 nC (typical) at 10V and input capacitance of 3270 pF (maximum) at 25V are key parameters for efficient switching. The IRF2807ZSTRL is housed in a TO-263-3, D2PAK surface-mount package and operates across a wide temperature range of -55°C to 175°C. This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and motor control systems. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 49 week(s)Product Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs9.4mOhm @ 53A, 10V
FET Feature-
Power Dissipation (Max)170W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3270 pF @ 25 V

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