IRCZ44PBF
MOSFET N-CH 60V 50A TO220-5Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix HEXFET® IRCZ44PBF is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C (Tc). With a low on-resistance of 28mOhm at 31A and 10V gate drive, it minimizes conduction losses. The IRCZ44PBF offers a maximum power dissipation of 150W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 95 nC at 10V and input capacitance (Ciss) of 2500 pF at 25V. The TO-220-5 package facilitates through-hole mounting. This device is suitable for applications in automotive, industrial power control, and consumer electronics requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 31A, 10V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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