IRCZ34PBF
MOSFET N-CH 60V 30A TO220-5Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix HEXFET® N-Channel Power MOSFET, part number IRCZ34PBF. This through-hole TO-220-5 packaged device offers a 60V drain-source voltage and a continuous drain current of 30A at 25°C. Key electrical characteristics include a maximum Rds(On) of 50mOhm at 18A and 10V, with a gate charge of 46 nC at 10V. The IRCZ34PBF features current sensing capabilities and a maximum power dissipation of 88W at 25°C. Operating temperature range is -55°C to 175°C. This component is suitable for applications in industrial and automotive sectors requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 18A, 10V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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