IRCZ24PBF
MOSFET N-CH 55V 17A TO220-5Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix HEXFET® N-Channel Power MOSFET, part number IRCZ24PBF. This TO-220-5 packaged device features a 55V drain-to-source voltage (Vdss) and a continuous drain current of 17A at 25°C (Tc). The Rds(On) is specified at a maximum of 100mOhm at 10A and 10V gate-source voltage. Designed for current sensing applications, this MOSFET offers a maximum power dissipation of 60W (Tc) and a junction temperature range of -55°C to 175°C. Key electrical parameters include a gate charge (Qg) of 24 nC maximum at 10V and an input capacitance (Ciss) of 720 pF maximum at 25V. The IRCZ24PBF is suitable for use in industrial automation, power supply, and motor control applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 10V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 25 V |
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