IRC830PBF
MOSFET N-CH 500V 4.5A TO220-5Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix HEXFET® Power MOSFET, part number IRC830PBF, is an N-Channel device with a 500V Drain-Source voltage (Vdss) and a continuous drain current (Id) of 4.5A at 25°C (Tc). This through-hole component features a low Rds On of 1.5 Ohm maximum at 2.7A and 10V gate drive. Key parameters include a gate charge (Qg) of 38 nC maximum at 10V and input capacitance (Ciss) of 610 pF maximum at 25V. The IRC830PBF offers a maximum power dissipation of 74W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). Designed with current sensing capabilities, this MOSFET is suitable for applications in power supplies, motor control, and industrial automation. It is supplied in a TO-220-5 package.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.7A, 10V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |
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