IRC740PBF
MOSFET N-CH 400V 10A TO220-5Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix HEXFET® N-Channel Power MOSFET, part number IRC740PBF. This through-hole component offers a Vdss of 400V and a continuous drain current capability of 10A at 25°C (Tc). Featuring a low Rds(on) of 550mOhm at 6A and 10V, this device is suitable for demanding applications requiring efficient power switching. The IRC740PBF boasts a maximum power dissipation of 125W (Tc) and a gate charge of 66 nC at 10V. Key parameters include an input capacitance (Ciss) of 1200pF at 25V and a gate-source voltage (Vgs) tolerance of ±20V. The N-Channel MOSFET technology is integrated within a TO-220-5 package. This component finds application in power supply units, motor control, and lighting control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 6A, 10V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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