IRC730PBF
MOSFET N-CH 400V 5.5A TO220-5Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix HEXFET® N-Channel Power MOSFET, part number IRC730PBF, offers a 400V drain-source breakdown voltage and a continuous drain current capability of 5.5A (Tc). This TO-220-5 packaged device features a low on-resistance of 1 Ohm maximum at 3.3A, 10V Vgs, and a gate charge of 38nC maximum at 10V Vgs. With a maximum power dissipation of 74W (Tc) and an operating temperature range of -55°C to 150°C, it is suitable for applications requiring robust switching performance. Key specifications include an input capacitance (Ciss) of 700pF maximum at 25V and a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA. This component is utilized in power supply, motor control, and industrial automation sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.3A, 10V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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