IRC644PBF
MOSFET N-CH 250V 14A TO220-5Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix HEXFET® N-Channel Power MOSFET, part number IRC644PBF, offers a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 14A at 25°C. This through-hole TO-220-5 packaged device features a maximum on-resistance (Rds On) of 280mOhm at 8.4A and 10V gate-source voltage. With a gate charge (Qg) of 65 nC at 10V and input capacitance (Ciss) of 1200 pF at 25V, it is suitable for demanding applications. The IRC644PBF boasts a maximum power dissipation of 125W (Tc) and operates across a wide temperature range of -55°C to 150°C. Its current sensing capability makes it valuable in power supply circuits, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 8.4A, 10V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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