IRC640PBF
MOSFET N-CH 200V 18A TO220-5Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix HEXFET® N-Channel Power MOSFET, part number IRC640PBF. This TO-220-5 packaged device offers a 200V drain-source breakdown voltage and a continuous drain current of 18A at 25°C. Featuring low on-resistance of 180mOhm at 11A, 10V, and a gate charge of 70nC, this MOSFET is optimized for current sensing applications. Key parameters include input capacitance (Ciss) of 1300pF at 25V and a maximum power dissipation of 125W. The IRC640PBF operates across a temperature range of -55°C to 150°C and is suitable for applications in industrial and power switching sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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