IRC634PBF
MOSFET N-CH 250V 8.1A TO220-5Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix HEXFET® IRC634PBF is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 8.1A at 25°C (Tc), with a maximum power dissipation of 74W (Tc). The low Rds On of 450mOhm at 4.9A and 10V drive voltage, coupled with a gate charge (Qg) of 41nC (Max) at 10V, ensures efficient switching performance. It also offers current sensing capabilities and a thermal resistance (RthJC) suitable for many power conversion circuits. The TO-220-5 package facilitates robust thermal management. This MOSFET is commonly deployed in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 4.9A, 10V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |
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