IRC630PBF
MOSFET N-CH 200V 9A TO220-5Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix HEXFET® N-Channel Power MOSFET, part number IRC630PBF. This device features a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 9A at 25°C. The on-resistance (Rds On) is specified at a maximum of 400mOhm at 5.4A and 10V gate drive voltage. With a maximum power dissipation of 74W (Tc), it is suitable for applications requiring efficient power handling. The MOSFET incorporates current sensing capabilities and a gate charge (Qg) of 43nC at 10V. Input capacitance (Ciss) is a maximum of 800pF at 25V. This component is packaged in a TO-220-5 through-hole configuration and operates within a temperature range of -55°C to 150°C. It finds application in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 10V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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