IRC530PBF
MOSFET N-CH 100V 14A TO220-5Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix HEXFET® IRC530PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 14A at 25°C. With a low on-resistance of 160mOhm maximum at 8.4A and 10V Vgs, it minimizes conduction losses. The IRC530PBF offers a gate charge (Qg) of 26nC maximum at 10V and an input capacitance (Ciss) of 700pF maximum at 25V. Its current sensing capability makes it suitable for power management and control circuits. The device is packaged in a TO-220-5 through-hole configuration, providing a thermal dissipation capability of 88W at 25°C. Operating temperature range is -55°C to 175°C. This MOSFET is utilized in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 8.4A, 10V |
| FET Feature | Current Sensing |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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