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3N164

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3N164

MOSFET P-CH 30V 50MA TO72

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix P-channel MOSFET, part number 3N164, offers a 30V drain-to-source breakdown voltage and a continuous drain current of 50mA at 25°C ambient. This TO-72 packaged device features a maximum on-resistance of 300 Ohms at 100µA gate-source voltage and 20V. With a maximum power dissipation of 375mW (Ta), it is suitable for applications requiring low power switching and amplification. The 3N164 exhibits an input capacitance of 3.5pF at 15V. This component is utilized in various industrial and defense sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-206AF, TO-72-4 Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C50mA (Ta)
Rds On (Max) @ Id, Vgs300Ohm @ 100µA, 20V
FET Feature-
Power Dissipation (Max)375mW (Ta)
Vgs(th) (Max) @ Id5V @ 10µA
Supplier Device PackageTO-72
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds3.5 pF @ 15 V

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