3N163-E3
MOSFET P-CH 40V 50MA TO72Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, part number 3N163-E3, offers a 40V drain-to-source voltage (Vdss) and a continuous drain current of 50mA at 25°C. This through-hole component is housed in a TO-72 (TO-206AF, TO-72-4 Metal Can) package, with a maximum power dissipation of 375mW. The Rds On is specified at 250 Ohms maximum for 100µA drain current and 20V gate-source voltage, with a threshold voltage (Vgs(th)) of 5V maximum at 10µA. Input capacitance (Ciss) is a maximum of 3.5pF at 15V Vds. The device operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in industrial and defense sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50mA (Ta) |
| Rds On (Max) @ Id, Vgs | 250Ohm @ 100µA, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 375mW (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 10µA |
| Supplier Device Package | TO-72 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3.5 pF @ 15 V |
Request a Quote
Clients Also Buy
IRFIBC30G
MOSFET N-CH 600V 2.5A TO220-3
IRF820APBF-BE3
MOSFET N-CH 500V 2.5A TO220AB
SQD50P06-15L_T4GE3
P-CHANNEL 60-V (D-S) 175C MOSFET
