3N163-2
MOSFET P-CH 40V 50MA TO72Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix 3N163-2 is a P-Channel MOSFET in a TO-72 package. This device offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 50mA at 25°C. The Rds On is specified at a maximum of 250 Ohms for a gate-source voltage (Vgs) of 20V and a drain current (Id) of 100µA. Key parameters include a gate-source voltage (Vgs) limit of ±30V and a threshold voltage (Vgs(th)) of 5V at 10µA. Input capacitance (Ciss) is a maximum of 3.5 pF at 15V. The component has a maximum power dissipation of 375mW and operates within a temperature range of -55°C to 150°C. This Vishay Siliconix MOSFET is suitable for various applications, including general-purpose switching and amplification circuits found in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50mA (Ta) |
| Rds On (Max) @ Id, Vgs | 250Ohm @ 100µA, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 375mW (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 10µA |
| Supplier Device Package | TO-72 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3.5 pF @ 15 V |
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