2N7002E-T1-E3
MOSFET N-CH 60V 240MA SOT23-3Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix 2N7002E-T1-E3 is an N-Channel MOSFET designed for general-purpose switching applications. This device features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 240mA at 25°C. The Rds(On) is specified at a maximum of 3 Ohms when driven at 250mA and 10V. With a 4.5V gate-source drive voltage, the Rds(On) is also critically specified. The component is housed in a standard SOT-23-3 (TO-236) surface-mount package, facilitating integration into compact designs. Key electrical parameters include a maximum power dissipation of 350mW (Ta) and a gate charge (Qg) of 0.6 nC at 4.5V. Input capacitance (Ciss) is a maximum of 21 pF at 5V. This MOSFET is suitable for use in a wide range of industries including industrial automation, consumer electronics, and telecommunications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 21 pF @ 5 V |