2N7002-E3
MOSFET N-CH 60V 115MA TO236Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel 2N7002-E3. This surface mount device features a 60V drain-to-source voltage and a continuous drain current of 115mA at 25°C. The Rds On is a maximum of 7.5 Ohms at 500mA and 10V Vgs, with a gate threshold voltage of 2.5V at 250µA. Input capacitance (Ciss) is rated at a maximum of 50pF at 25V. The power dissipation is 200mW at 25°C. The TO-236-3, SC-59, SOT-23-3 package is supplied on tape and reel. This component is utilized in industrial and consumer electronics applications. Maximum gate-source voltage is ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 115mA (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-236 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |