2N6661JTXV02
MOSFET N-CH 90V 860MA TO39Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix 2N6661JTXV02 is a through-hole N-Channel power MOSFET in a TO-39 package. This device features a drain-source breakdown voltage of 90V and a continuous drain current capability of 860mA at 25°C (Tc). With a maximum on-resistance of 4 Ohms at 1A and 10V Vgs, it offers efficient switching characteristics. The device supports a gate-source voltage range of ±20V. The 2N6661JTXV02 is suitable for applications requiring robust performance in demanding environments, including industrial control and aerospace systems. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-39 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 90 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
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