2N6661JTVP02
MOSFET N-CH 90V 860MA TO39Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel MOSFET, part number 2N6661JTVP02, is a through-hole component housed in a TO-39 package. This device offers a drain-source voltage (Vdss) of 90V and a continuous drain current (Id) of 860mA at 25°C (Tc). The on-resistance (Rds On) is a maximum of 4 Ohms at 1A and 10V. Featuring a gate-source threshold voltage (Vgs(th)) of 2V at 1mA and a maximum gate-source voltage (Vgs) of ±20V, this MOSFET has an input capacitance (Ciss) of 50pF. Power dissipation is rated at 725mW (Ta) and 6.25W (Tc). This component is suitable for applications in industrial and military sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-39 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 90 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
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