2N6661JAN02
MOSFET N-CH 90V 860MA TO39Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel Power MOSFET, part number 2N6661JAN02, offers a 90V drain-source voltage rating and a continuous drain current capability of 860mA at 25°C (Tc). This TO-39 packaged device features a maximum on-resistance of 4 Ohms at 1A drain current and 10V gate-source voltage. Designed for through-hole mounting, it operates across a temperature range of -55°C to 150°C. Key parameters include a ±20V Vgs(max) and a 2V Vgs(th) at 1mA. Power dissipation is rated at 725mW (Ta) and 6.25W (Tc). This component is suitable for applications in industrial and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-39 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 90 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SUP90330E-GE3
MOSFET N-CH 200V 35.8A TO220AB
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
