2N6661-E3
MOSFET N-CH 90V 860MA TO39Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel MOSFET, part number 2N6661-E3, is a TO-39 packaged device designed for high-reliability applications. This device features a drain-to-source voltage (Vdss) of 90 V and a continuous drain current (Id) of 860 mA at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 4 Ohms at 1 A drain current and 10 V gate-source voltage. The component has a maximum gate-source voltage (Vgs) of ±20 V and a threshold voltage (Vgs(th)) of 2 V at 1 mA. Power dissipation capabilities include 725 mW (Ta) and 6.25 W (Tc). Input capacitance (Ciss) is a maximum of 50 pF at 25 V. The device operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in industrial and defense sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-39 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 90 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
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