2N6660JTX02
MOSFET N-CH 60V 990MA TO205ADManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel MOSFET, part number 2N6660JTX02, features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 990mA at 25°C (Tc). This component offers a maximum on-resistance (Rds On) of 3 Ohms at 1A and 10V Vgs. With a power dissipation capability of 725mW (Ta) and 6.25W (Tc), it is housed in a TO-205AD (TO-39) metal can package for through-hole mounting. Key parameters include input capacitance (Ciss) of 50pF at 25V and a gate-to-source threshold voltage (Vgs(th)) of 2V at 1mA. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in industrial and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 990mA (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-205AD (TO-39) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SUP90330E-GE3
MOSFET N-CH 200V 35.8A TO220AB
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
