2N6660JTVP02
MOSFET N-CH 60V 990MA TO205ADManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel 2N6660JTVP02 offers a 60V drain-source voltage with a continuous drain current of 990mA at 25°C (Tc). This through-hole component, housed in a TO-205AD (TO-39) metal can package, features a maximum on-resistance of 3 Ohms at 1A and 10V gate-source voltage. The device has a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2V at 1mA. Power dissipation is rated at 725mW (Ta) and 6.25W (Tc). Operating temperature range is from -55°C to 150°C (TJ). This component is commonly utilized in power switching and general-purpose applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 990mA (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-205AD (TO-39) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
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