2N6660-E3
MOSFET N-CH 60V 990MA TO205ADManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET, N-Channel, 2N6660-E3. This device features a 60V drain-source breakdown voltage and a continuous drain current of 990mA at 25°C (Tc). The on-resistance (Rds On) is specified as a maximum of 3 Ohms at 1A and 10V Vgs. It offers a maximum power dissipation of 725mW (Ta) or 6.25W (Tc). The TO-205AD (TO-39) package is designed for through-hole mounting. Key parameters include a Vgs(th) of 2V at 1mA and an input capacitance (Ciss) of 50 pF at 25V. This component is suitable for applications in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 990mA (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-205AD (TO-39) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
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