U291-E3
JFET N-CH 30V TO206ACManufacturer: Vishay Siliconix
Categories: JFETs
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Vishay Siliconix U291-E3 is an N-Channel JFET designed for general-purpose amplification and switching applications. This component features a breakdown voltage of 30V (V(BR)GSS) and a maximum power dissipation of 500mW. The U291-E3 exhibits a typical drain current (Idss) of 200mA at 10V drain-source voltage with zero gate-source voltage. Its input capacitance (Ciss) is specified at a maximum of 160pF at 0V. The device offers a low on-resistance (RDS(On)) of 7 Ohms. Packaged in a TO-206AC (TO-52) metal can for through-hole mounting, this JFET operates across a wide temperature range of -55°C to 150°C. It finds application in industrial controls, audio circuitry, and RF amplification stages.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-206AC, TO-52-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 0V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | TO-206AC (TO-52) |
| Power - Max | 500 mW |
| Resistance - RDS(On) | 7 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 1.5 V @ 3 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 200 mA @ 10 V |
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