SST5485-T1-E3
JFET N-CH 25V SOT23Manufacturer: Vishay Siliconix
Categories: JFETs
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Vishay Siliconix SST5485-T1-E3 is an N-Channel JFET designed for high-performance switching and amplification applications. This component features a 25V drain-source breakdown voltage and a maximum power dissipation of 350mW. The device exhibits a typical IDSS of 4mA at 15V (VGS=0) and a gate-source cutoff voltage (VGS off) of 500mV at 10nA. Input capacitance (Ciss) is specified at a maximum of 5pF at 15V. The SST5485-T1-E3 is housed in a SOT-23 surface-mount package, ideal for space-constrained designs. Operating temperature range is -55°C to 150°C. This JFET is commonly utilized in industrial control systems, audio circuits, and general-purpose analog signal processing.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 5pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Supplier Device Package | SOT-23 |
| Power - Max | 350 mW |
| Voltage - Cutoff (VGS off) @ Id | 500 mV @ 10 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 4 mA @ 15 V |
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