SST4119-T1-E3
JFET N-CH 40V TO236Manufacturer: Vishay Siliconix
Categories: JFETs
Quality Control: Learn More
Vishay Siliconix SST4119-T1-E3 is an N-channel JFET designed for high-frequency applications. This surface mount device, packaged in a TO-236 (SC-59) configuration, offers a breakdown voltage of 40V. The SST4119-T1-E3 exhibits a drain current (Idss) of 200 µA at 10V (Vgs=0) and a maximum power dissipation of 350 mW. Key parameters include a cutoff voltage (VGS off) of 2V at 1 nA and an input capacitance (Ciss) of 3pF at 10V. Operating across a wide temperature range of -55°C to 175°C, this Vishay Siliconix JFET is suitable for use in RF amplification, switching, and impedance matching circuits within the telecommunications and industrial electronics sectors. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 10V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | TO-236 |
| Power - Max | 350 mW |
| Voltage - Cutoff (VGS off) @ Id | 2 V @ 1 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 200 µA @ 10 V |
Request a Quote
Clients Also Buy
2N4416A-2
JFET N-CH 35V TO206AF
SST5484-E3
JFET N-CH 25V SOT23
2N5432-2
JFET N-CH 25V TO206AC