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2N4393-E3

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2N4393-E3

JFET N-CH 40V TO206AA

Manufacturer: Vishay Siliconix

Categories: JFETs

Quality Control: Learn More

Vishay Siliconix 2N4393-E3 is an N-Channel JFET designed for high-performance applications. This component features a 40V breakdown voltage (V(BR)GSS) and a maximum power dissipation of 1.8W. The drain current (Idss) is specified at 5mA at 20V (Vgs=0), with a typical gate-source cutoff voltage (VGS off) of 500mV at 1nA. The on-resistance (RDS(On)) is 100 Ohms. The device is housed in a TO-206AA (TO-18) metal can package, suitable for through-hole mounting. It operates across a wide temperature range of -65°C to 200°C. This JFET is commonly utilized in RF amplification, switching, and general-purpose analog circuitry within industries such as telecommunications and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 200°C (TJ)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds14pF @ 20V
Voltage - Breakdown (V(BR)GSS)40 V
Supplier Device PackageTO-206AA (TO-18)
Power - Max1.8 W
Resistance - RDS(On)100 Ohms
Voltage - Cutoff (VGS off) @ Id500 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0)5 mA @ 20 V

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