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2N4339-E3

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2N4339-E3

JFET N-CH 50V TO206AA

Manufacturer: Vishay Siliconix

Categories: JFETs

Quality Control: Learn More

Vishay Siliconix 2N4339-E3 N-Channel JFET, packaged in a TO-206AA (TO-18) metal can. This through-hole component offers a breakdown voltage of 50V and a maximum power dissipation of 300mW. Key parameters include a drain current (IDSS) of 500 µA at 15V (VGS=0) and a cutoff voltage (VGS off) of 600mV at 100nA. The input capacitance (Ciss) is a maximum of 7pF at 15V. Operating temperature range is from -55°C to 175°C. This device is suitable for applications in industrial and defense sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds7pF @ 15V
Voltage - Breakdown (V(BR)GSS)50 V
Supplier Device PackageTO-206AA (TO-18)
Power - Max300 mW
Voltage - Cutoff (VGS off) @ Id600 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0)500 µA @ 15 V

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