2N4339
JFET N-CH 50V TO206AAManufacturer: Vishay Siliconix
Categories: JFETs
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Vishay Siliconix 2N4339 is an N-Channel JFET designed for high-reliability applications. This component features a breakdown voltage (V(BR)GSS) of 50V and a maximum power dissipation of 300mW. The drain current (Idss) at Vgs=0 is specified as 500 µA at 15V, with a gate-source cutoff voltage (VGS off) of 600 mV at 100 nA. Input capacitance (Ciss) is a maximum of 7pF at 15V.
The 2N4339 is housed in a TO-206AA (TO-18) metal can package, suitable for through-hole mounting. It operates within an extended temperature range of -55°C to 175°C. This JFET is commonly utilized in applications requiring low noise amplification and high input impedance, such as in test and measurement equipment, audio preamplifiers, and RF circuits. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 50 V |
| Supplier Device Package | TO-206AA (TO-18) |
| Power - Max | 300 mW |
| Voltage - Cutoff (VGS off) @ Id | 600 mV @ 100 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 500 µA @ 15 V |
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