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2N4117A-E3

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2N4117A-E3

JFET N-CH 40V TO206AF

Manufacturer: Vishay Siliconix

Categories: JFETs

Quality Control: Learn More

Vishay Siliconix 2N4117A-E3 is an N-Channel JFET designed for applications requiring low noise and high input impedance. This device features a 40V breakdown voltage (V(BR)GSS) and a maximum power dissipation of 300mW. The drain current (Idss) is specified at 30 µA with Vds at 10V and Vgs at 0V, while the cutoff voltage (VGS off) is 600mV at 1nA. Input capacitance (Ciss) is a maximum of 3pF at 10V. The component is housed in a TO-206AF (TO-72) metal can package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 175°C. This JFET is commonly utilized in high-impedance amplifiers, RF switching, and other analog signal processing circuitry across various industrial and defense sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-206AF, TO-72-4 Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds3pF @ 10V
Voltage - Breakdown (V(BR)GSS)40 V
Supplier Device PackageTO-206AF (TO-72)
Power - Max300 mW
Voltage - Cutoff (VGS off) @ Id600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0)30 µA @ 10 V

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