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SI9912DY-T1-E3

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SI9912DY-T1-E3

IC GATE DRVR HALF-BRIDGE 8SOIC

Manufacturer: Vishay Siliconix

Categories: Gate Drivers

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Vishay Siliconix SI9912DY-T1-E3 is a half-bridge gate driver IC featuring non-inverting inputs. This device is designed for driving N-channel MOSFETs in a half-bridge configuration, providing two independent driver channels. It offers peak output currents of 1A sourcing and 1A sinking, with typical rise and fall times of 30ns and 20ns respectively. The high-side voltage capability extends up to 30V, facilitated by a bootstrap mechanism. Operating within a supply voltage range of 4.5V to 5.5V, this component is suitable for operation across a temperature range of -40°C to 125°C (TJ). Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount case and supplied on tape and reel, the SI9912DY-T1-E3 finds application in power conversion systems, motor control, and power supply designs.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)
Voltage - Supply4.5V ~ 5.5V
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)30 V
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)30ns, 20ns
Channel TypeSynchronous
Driven ConfigurationHalf-Bridge
Number of Drivers2
Gate TypeN-Channel MOSFET
Logic Voltage - VIL, VIH-
Current - Peak Output (Source, Sink)1A, 1A
ProgrammableNot Verified

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