VQ3001P-E3
MOSFET 2N/2P-CH 30V 0.85AManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix VQ3001P-E3 MOSFET Array. This component features a 30V drain-to-source voltage (Vdss) and offers two N-channel and two P-channel MOSFETs. The continuous drain current (Id) at 25°C is specified at 850mA for one N-channel and 600mA for the P-channel. The device has a maximum power dissipation of 2W and an Rds On (Max) of 1 Ohm at 1A, 12V for the N-channel and a corresponding value for the P-channel. Input capacitance (Ciss) is 110pF at 15V for the N-channel and 150pF at 15V for the P-channel. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA. Operating temperature range is -55°C to 150°C. This MOSFET array is suitable for applications in portable electronics and power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Configuration | 2 N and 2 P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 850mA, 600mA |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 15V, 150pF @ 15V |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1A, 12V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | - |
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