VQ2001P-2
MOSFET 4P-CH 30V 0.6A 14DIPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix VQ2001P-2 is a 4 P-channel MOSFET array designed for demanding applications. This through-hole component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 600mA at 25°C. The device offers a maximum on-resistance (Rds On) of 2 Ohms at 1A and 12V, with a power dissipation of 2W. The input capacitance (Ciss) is specified at 150pF maximum at 15V. Encased in a 14-DIP package, this MOSFET array operates within a temperature range of -55°C to 150°C. The Vishay Siliconix VQ2001P-2 is suitable for use in industrial and consumer electronics where robust switching performance is required.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 14-DIP |
| Mounting Type | Through Hole |
| Configuration | 4 P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 600mA |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 15V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1A, 12V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | 14-DIP |