VQ2001P
MOSFET 4P-CH 30V 0.6A 14DIPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix VQ2001P is a 4 P-channel MOSFET array designed for high-density applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 600mA at 25°C. The MOSFET array offers a low on-resistance (Rds On) of 2 Ohm maximum at 1A and 12V, contributing to efficient power handling with a maximum power dissipation of 2W. With an input capacitance (Ciss) of 150pF maximum at 15V, it is suitable for various switching applications. The VQ2001P operates within a temperature range of -55°C to 150°C (TJ). This component is commonly utilized in industrial and consumer electronics requiring compact, high-performance power switching solutions. It is supplied in a tube package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Configuration | 4 P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 600mA |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 15V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1A, 12V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | - |
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