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VQ1006P-2

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VQ1006P-2

MOSFET 4N-CH 90V 0.4A 14DIP

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix VQ1006P-2 is a 4-channel N-channel MOSFET array housed in a 14-DIP through-hole package. This device features a 90V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 400mA at 25°C. With a maximum power dissipation of 2W and an on-resistance (Rds On) of 4.5 Ohms at 1A and 10V, the VQ1006P-2 is suitable for various switching and amplification applications. The MOSFET technology incorporates a logic level gate for enhanced compatibility. Operating temperature range is specified from -55°C to 150°C. This component finds utility in industrial automation, consumer electronics, and telecommunications sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / Case-
Mounting TypeThrough Hole
Configuration4 N-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2W
Drain to Source Voltage (Vdss)90V
Current - Continuous Drain (Id) @ 25°C400mA
Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
Rds On (Max) @ Id, Vgs4.5Ohm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs-
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device Package14-DIP

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