VQ1006P
MOSFET 4N-CH 90V 0.4A 14DIPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix VQ1006P is a 4 N-Channel MOSFET array designed for power management applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 90V and a continuous drain current (Id) of 400mA at 25°C. The device offers low on-resistance, specified as 4.5 Ohms maximum at 1A and 10V Vgs. With a Gate Threshold Voltage (Vgs(th)) of 2.5V maximum at 1mA and a logic level gate feature, it facilitates efficient switching. The Vishay Siliconix VQ1006P is housed in a 14-DIP package, with a maximum power dissipation of 2W. It operates across a wide temperature range from -55°C to 150°C. This component finds utility in industrial control and general-purpose switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Mounting Type | Through Hole |
| Configuration | 4 N-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 90V |
| Current - Continuous Drain (Id) @ 25°C | 400mA |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 14-DIP |
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