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VQ1006P

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VQ1006P

MOSFET 4N-CH 90V 0.4A 14DIP

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix VQ1006P is a 4 N-Channel MOSFET array designed for power management applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 90V and a continuous drain current (Id) of 400mA at 25°C. The device offers low on-resistance, specified as 4.5 Ohms maximum at 1A and 10V Vgs. With a Gate Threshold Voltage (Vgs(th)) of 2.5V maximum at 1mA and a logic level gate feature, it facilitates efficient switching. The Vishay Siliconix VQ1006P is housed in a 14-DIP package, with a maximum power dissipation of 2W. It operates across a wide temperature range from -55°C to 150°C. This component finds utility in industrial control and general-purpose switching applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / Case-
Mounting TypeThrough Hole
Configuration4 N-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2W
Drain to Source Voltage (Vdss)90V
Current - Continuous Drain (Id) @ 25°C400mA
Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
Rds On (Max) @ Id, Vgs4.5Ohm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs-
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device Package14-DIP

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