VQ1001P-E3
MOSFET 4N-CH 30V 0.83A 14DIPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix VQ1001P-E3 is a 4 N-channel MOSFET array designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 830mA at 25°C. The VQ1001P-E3 is built with Metal Oxide technology and offers a low Rds(on) of 1.75 Ohms maximum at 200mA, 5V Vgs. It includes a logic level gate feature for enhanced compatibility. The component operates within a wide temperature range of -55°C to 150°C and supports up to 2W of power dissipation. Packaged in a 14-DIP through-hole configuration, this MOSFET array is suitable for use in power management and general-purpose switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Mounting Type | Through Hole |
| Configuration | 4 N-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 830mA |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 15V |
| Rds On (Max) @ Id, Vgs | 1.75Ohm @ 200mA, 5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 14-DIP |
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