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VQ1001P-E3

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VQ1001P-E3

MOSFET 4N-CH 30V 0.83A 14DIP

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix VQ1001P-E3 is a 4 N-channel MOSFET array designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 830mA at 25°C. The VQ1001P-E3 is built with Metal Oxide technology and offers a low Rds(on) of 1.75 Ohms maximum at 200mA, 5V Vgs. It includes a logic level gate feature for enhanced compatibility. The component operates within a wide temperature range of -55°C to 150°C and supports up to 2W of power dissipation. Packaged in a 14-DIP through-hole configuration, this MOSFET array is suitable for use in power management and general-purpose switching applications across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / Case-
Mounting TypeThrough Hole
Configuration4 N-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C830mA
Input Capacitance (Ciss) (Max) @ Vds110pF @ 15V
Rds On (Max) @ Id, Vgs1.75Ohm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs-
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device Package14-DIP

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