VQ1001P-2
MOSFET 4N-CH 30V 0.83A 14DIPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix VQ1001P-2 is a 4 N-Channel MOSFET array designed for high-density switching applications. This through-hole component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 830mA at 25°C. The device is constructed with Metal Oxide technology and offers a low Rds(on) of 1.75 Ohms maximum at 200mA and 5V. Its logic-level gate allows for direct interfacing with low-voltage microcontrollers. The VQ1001P-2 is packaged in a 14-DIP format, with a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C. This component is utilized in industrial automation, consumer electronics, and power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Mounting Type | Through Hole |
| Configuration | 4 N-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 830mA |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 15V |
| Rds On (Max) @ Id, Vgs | 1.75Ohm @ 200mA, 5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 14-DIP |
Request a Quote
Clients Also Buy
SI4973DY-T1-E3
MOSFET 2P-CH 30V 5.8A 8SOIC
SI4920DY-T1-E3
MOSFET 2N-CH 30V 8SOIC
SI7234DP-T1-GE3
MOSFET 2N-CH 12V 60A PPAK SO8
