VQ1001P
MOSFET 4N-CH 30V 0.83A 14DIPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix VQ1001P is a 4 N-Channel MOSFET array with a drain-source voltage (Vdss) of 30V. This through-hole component, housed in a 14-DIP package, offers a continuous drain current (Id) of 830mA at 25°C and a maximum power dissipation of 2W. The Rds On is specified at 1.75 Ohms maximum at 200mA and 5V gate-source voltage, featuring logic-level gate operation. Input capacitance (Ciss) is 110pF maximum at 15V. This MOSFET array is suitable for applications in industrial and consumer electronics. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Mounting Type | Through Hole |
| Configuration | 4 N-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 830mA |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 15V |
| Rds On (Max) @ Id, Vgs | 1.75Ohm @ 200mA, 5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 14-DIP |
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