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SQUN702E-T1_GE3

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SQUN702E-T1_GE3

MOSFET N/P-CH 40V/200V 30A DIE

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Mosfet Array 40V, 200V 30A (Tc), 20A (Tc) 48W (Tc), 60W (Tc) Surface Mount, Wettable Flank Die

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDie
Mounting TypeSurface Mount, Wettable Flank
ConfigurationN and P-Channel, Common Drain
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max48W (Tc), 60W (Tc)
Drain to Source Voltage (Vdss)40V, 200V
Current - Continuous Drain (Id) @ 25°C30A (Tc), 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
Rds On (Max) @ Id, Vgs9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 250µA, 3.5V @ 250µA
Supplier Device PackageDie
GradeAutomotive
QualificationAEC-Q101

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