SQJ962EP-T1-GE3
MOSFET 2N-CH 60V 8A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® series MOSFET array, part number SQJ962EP-T1-GE3, offers a dual N-channel configuration designed for high-efficiency power management. This AEC-Q101 qualified component features a 60V drain-to-source voltage rating and a continuous drain current capability of 8A at 25°C, with a low on-resistance of 60mOhm at 4.3A and 10V. The logic-level gate allows for direct interfacing with lower voltage control signals. With a maximum power dissipation of 25W and an operating temperature range of -55°C to 175°C, this MOSFET array is suitable for demanding automotive applications. Packaged in a surface-mount PowerPAK® SO-8 Dual, it is supplied on tape and reel for automated assembly. Key electrical parameters include input capacitance (Ciss) of 475pF at 25V and gate charge (Qg) of 14nC at 10V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 25W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 25V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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