SQJ941EP-T1-GE3
MOSFET 2P-CH 30V 8A PPAK SO8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SQJ941EP-T1-GE3 TrenchFET® is a high-performance dual P-channel MOSFET array designed for demanding automotive applications. This AEC-Q101 qualified component features a 30V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 8A at 25°C, with a maximum power dissipation of 55W. The device offers a low on-resistance (Rds On) of 24mOhm at 9A and 10V, coupled with a logic level gate, ensuring efficient operation. With a gate charge (Qg) of 55nC at 10V and input capacitance (Ciss) of 1800pF at 10V, it is optimized for high-frequency switching. The SQJ941EP-T1-GE3 is housed in a surface-mount PowerPAK® SO-8 Dual package, ideal for compact designs. Its operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 55W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Grade | Automotive |
| Qualification | AEC-Q101 |