SMMA511DJ-T1-GE3
MOSFET N/P-CH 12V 4.5A SC70-6Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SMMA511DJ-T1-GE3 is a TrenchFET® MOSFET array featuring a dual N-channel and P-channel configuration. This device operates at a 12V Vdss rating and supports a continuous drain current of 4.5A per channel at 25°C, with a maximum power dissipation of 6.5W. Optimized for efficiency, it exhibits a low Rds On of 40mOhm at 4.2A and 4.5V. Key characteristics include a logic level gate, a maximum gate charge (Qg) of 12nC at 8V, and input capacitance (Ciss) of 400pF at 6V. The MOSFET array is housed in a compact PowerPAK® SC-70-6 Dual surface mount package and operates across a temperature range of -55°C to 150°C. This component is well-suited for applications in consumer electronics, industrial automation, and battery management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 6.5W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 6V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 8V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |