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SIZF906ADT-T1-GE3

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SIZF906ADT-T1-GE3

MOSFET 2N-CH 30V 27A 8POWERPAIR

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® Gen IV SIZF906ADT-T1-GE3 is a dual N-channel MOSFET array designed for high-efficiency power conversion applications. This component features a 30V drain-source breakdown voltage and offers a continuous drain current of 27A at ambient temperature and up to 60A at case temperature. The device exhibits low on-resistance, with specified values of 3.8mOhm @ 15A, 10V and 1.17mOhm @ 20A, 10V, contributing to reduced conduction losses. It includes integrated Schottky diodes for improved switching performance. The SIZF906ADT-T1-GE3 is housed in an 8-PowerPair® (6x5) surface-mount package, facilitating compact board layouts. Key parameters include a maximum gate charge of 49nC and input capacitance of 2000pF for one channel, and 200nC and 8200pF for the other, respectively. Its robust thermal performance allows for power dissipation up to 4.5W (Ta) and 38W (Tc) for the first channel, and 5W (Ta) and 83W (Tc) for the second. This MOSFET array is suitable for use in power supplies, DC-DC converters, and motor control systems.

Additional Information

Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual), Schottky
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 15V, 8200pF @ 15V
Rds On (Max) @ Id, Vgs3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs49nC @ 10V, 200nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-PowerPair® (6x5)

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