SIZF640DT-T1-GE3
MOSFET 2N-CH 40V 41A PWRPAIRManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® Gen IV MOSFET array, part number SIZF640DT-T1-GE3, offers a dual N-channel configuration within a PowerPAIR® 6x5FS package. This surface mount device features a 40V drain-to-source voltage rating. Continuous drain current capability is 41A at ambient temperature and 159A at case temperature. The array exhibits a low on-resistance of 1.37mOhm at 15A and 10V, with a maximum gate charge of 106nC at 10V and input capacitance of 5750pF at 20V. Power dissipation is rated at 4.2W ambient and 62.5W case temperature. Operating temperature range is -55°C to 150°C. This component is commonly utilized in power management applications across automotive and industrial sectors. The SIZF640DT-T1-GE3 is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 4.2W (Ta), 62.5W (Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 41A (Ta), 159A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 5750pF @ 20V |
| Rds On (Max) @ Id, Vgs | 1.37mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 106nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAIR® 6x5FS |
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