SIZ920DT-T1-GE3
MOSFET 2N-CH 30V 40A 8POWERPAIRManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SIZ920DT-T1-GE3 is a 2 N-Channel MOSFET array, configured as a half-bridge, designed for high-efficiency power switching applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 40A at 25°C. The on-resistance (Rds On) is a maximum of 7.1mOhm at 18.9A and 10V Vgs. With a gate charge (Qg) of 35nC at 10V and input capacitance (Ciss) of 1260pF at 15V, it offers optimized switching performance. The device supports power dissipation up to 39W or 100W, depending on the thermal management. It is housed in an 8-PowerPair® (6x5) surface mount package and operates within a temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in power supplies, automotive electronics, and industrial motor control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 39W, 100W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 40A |
| Input Capacitance (Ciss) (Max) @ Vds | 1260pF @ 15V |
| Rds On (Max) @ Id, Vgs | 7.1mOhm @ 18.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-PowerPair® (6x5) |
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