SIZ914DT-T1-GE3
MOSFET 2N-CH 30V 16A 8PWRPAIRManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix N-Channel MOSFET Array, part number SIZ914DT-T1-GE3, from the TrenchFET® series. This 8-PowerPair® packaged device features a 30V drain-source breakdown voltage and offers continuous drain currents of 16A and 40A at 25°C. The MOSFETs are designed with a logic level gate and exhibit a low on-resistance of 6.4 mOhm maximum at 19A and 10V. Key parameters include a maximum gate charge of 26nC at 10V and input capacitance of 1208pF at 15V. This component is suitable for surface mounting and operates within a temperature range of -55°C to 150°C. The SIZ914DT-T1-GE3 is utilized in power management applications across automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 22.7W, 100W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 16A, 40A |
| Input Capacitance (Ciss) (Max) @ Vds | 1208pF @ 15V |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 19A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-PowerPair® |
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