SIZ910DT-T1-GE3
MOSFET 2N-CH 30V 40A 8POWERPAIRManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SIZ910DT-T1-GE3 is a 30V N-channel MOSFET array. This component features a total continuous drain current of 40A at 25°C, with a maximum on-resistance of 5.8mOhm at 20A and 10V. The device is designed with a logic level gate and has a gate charge of 40nC maximum at 10V. Input capacitance (Ciss) is rated at 1500pF maximum at 15V. The SIZ910DT-T1-GE3 utilizes an 8-PowerPair® (6x5) surface mount package, offering a configurable half-bridge arrangement. It supports a maximum power dissipation of 48W or 100W and operates within a temperature range of -55°C to 150°C. This MOSFET array is commonly employed in power management applications across automotive, industrial, and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 48W, 100W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 40A |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 15V |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-PowerPair® (6x5) |
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