SIZ900DT-T1-GE3
MOSFET 2N-CH 30V 24A 6PWRPAIRManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SIZ900DT-T1-GE3 is a 30V, dual N-channel MOSFET array designed for high-efficiency power switching applications. This device features a 6-PowerPair™ package, enabling a compact footprint for demanding power management solutions. It offers continuous drain current ratings of 24A and 28A, with a maximum power dissipation of 48W and 100W respectively. The low on-resistance of 7.2mOhm at 19.4A and 10V, coupled with a logic-level gate drive, minimizes conduction losses and facilitates operation with lower gate drive voltages. Key parameters include a gate charge (Qg) of 45nC at 10V and input capacitance (Ciss) of 1830pF at 15V. This component is suitable for use in automotive, industrial, and consumer electronics sectors requiring robust power conversion. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerPair™ |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 48W, 100W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 24A, 28A |
| Input Capacitance (Ciss) (Max) @ Vds | 1830pF @ 15V |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 19.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 6-PowerPair™ |
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